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G18P03 - P-Channel Trench Power MOSFET

Download the G18P03 datasheet PDF. This datasheet also covers the G18P03S variant, as both devices belong to the same p-channel trench power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V.

This device is suitable for use as a wide variety of applications.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A.
  • High Power and current handing capability.
  • RoHS Compliant.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G18P03S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G18P03
Manufacturer GOFORD
File Size 2.05 MB
Description P-Channel Trench Power MOSFET
Datasheet download datasheet G18P03 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GOFORD P-Channel Trench Power MOSFET General Description The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V. This device is suitable for use as a wide variety of applications. Features ● VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A ● High Power and current handing capability ● RoHS Compliant ● Surface Mount Package Application ● DC-DC converter ● Load switch ● Power management Ordering Information Part Number G18P03S Marking G18P03 G18P03S Schematic Diagram Marking and pin assignment Case SOP-8 SOP-8 Packaging 4000pcs/Reel Table 1.