Datasheet4U.com

G18P03S - P-Channel Trench Power MOSFET

Product Overview

📥 Download Datasheet

G18P03S P-Channel Trench Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G18P03S

Datasheet Details

Part number	G18P03S
Manufacturer	GOFORD
File Size	2.05 MB
Description	P-Channel Trench Power MOSFET
Datasheet	G18P03S Datasheet
Additional preview pages of the G18P03S datasheet.

Product details

Description

The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V.

Features

VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A.
High Power and current handing capability.
RoHS Compliant.
Surface Mount Package.

📁 Similar Datasheet

G18-3A30NA - Photoelectric Sensor (ETC)
G185BGE-L01 - TFT LCD (CHIMEI Innolux)
G185HAN01.0 - Color TFT-LCD (AUO)
G185HAN01.1 - Color TFT-LCD (AUO)
G185HAN01.3 - Color TFT-LCD (AUO)
G185HAN01.4 - Color TFT-LCD (AUO)
G185XW01-V0 - Color TFT-LCD (AUO)
G185XW01-V1 - Color TFT-LCD (AUO)

Other Datasheets by GOFORD

G18P03 - P-Channel Trench Power MOSFET
G18P03D3 - P-Channel Trench MOSFET
G18N50 - N-Channel Enhancement Mode Power MOSFET
G18N50T - N-Channel Enhancement Mode Power MOSFET
G18NP06Y - N and P Channel Enhancement Mode Power MOSFET

Published: Nov 6, 2024 |