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G18P03S - P-Channel Trench Power MOSFET

General Description

The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V.

This device is suitable for use as a wide variety of applications.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A.
  • High Power and current handing capability.
  • RoHS Compliant.
  • Surface Mount Package.

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Datasheet Details

Part number G18P03S
Manufacturer GOFORD
File Size 2.05 MB
Description P-Channel Trench Power MOSFET
Datasheet download datasheet G18P03S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD P-Channel Trench Power MOSFET General Description The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V. This device is suitable for use as a wide variety of applications. Features ● VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A ● High Power and current handing capability ● RoHS Compliant ● Surface Mount Package Application ● DC-DC converter ● Load switch ● Power management Ordering Information Part Number G18P03S Marking G18P03 G18P03S Schematic Diagram Marking and pin assignment Case SOP-8 SOP-8 Packaging 4000pcs/Reel Table 1.