G18P03D3 - P-Channel Trench MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -10V).
RDS(ON) (at VGS = -4.5V).
100% Avalanche Tested.
RoHS Compliant.

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G18P03D3 P-Channel Trench MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G18P03D3

Datasheet Details

Part number	G18P03D3
Manufacturer	GOFORD
File Size	2.05 MB
Description	P-Channel Trench MOSFET
Datasheet	G18P03D3 Datasheet
Additional preview pages of the G18P03D3 datasheet.

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Full PDF Text Transcription

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GOFORD P-Channel Trench MOSFET Description The G18P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.

Published: Nov 6, 2024 |