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G18P03D3 - P-Channel Trench MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet Details

Part number G18P03D3
Manufacturer GOFORD
File Size 2.05 MB
Description P-Channel Trench MOSFET
Datasheet download datasheet G18P03D3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD P-Channel Trench MOSFET Description The G18P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.