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G2K2P10 - P-Channel Enhancement Mode Power MOSFET

Download the G2K2P10 datasheet PDF. This datasheet also covers the G2K2P10SE variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G2K2P10SE-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G2K2P10
Manufacturer GOFORD
File Size 560.65 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G2K2P10 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G2K2P10S2 Dual P-Channel Enhancement Mode Power MOSFET
G2K2P10S2E Dual P-Channel Enhancement Mode Power MOSFET
G2K2P10SE P-Channel Enhancement Mode Power MOSFET
G2K3N10 N-Channel Enhancement Mode Power MOSFET
G2K3N10G N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G2K2P10SE P-Channel Enhancement Mode Power MOSFET Description The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.