G2K2P10 - P-Channel Enhancement Mode Power MOSFET

Product Overview

Part number	G2K2P10
Manufacturer	GOFORD
File Size	560.65 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G2K2P10 Datasheet
Note	This datasheet PDF includes multiple part numbers: G2K2P10, G2K2P10SE. Please refer to the document for exact specifications by model.
Additional preview pages of the G2K2P10 datasheet.

The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ.

📁 Similar Datasheet

Other Datasheets by GOFORD

Published: Nov 3, 2024 |