G2K2P10SE Description
The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G2K2P10SE Key Features
- 100V -3.5A < 200mΩ < 220mΩ
- Part: G2K2P10SE
- Manufacturer: GOFORD
- Size: 560.65 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G2K2P10S2 | Dual P-Channel Enhancement Mode Power MOSFET |
| G2K2P10S2E | Dual P-Channel Enhancement Mode Power MOSFET |
| G2K2P10 | P-Channel Enhancement Mode Power MOSFET |
| G2K3N10 | N-Channel Enhancement Mode Power MOSFET |
| G2K3N10G | N-Channel Enhancement Mode Power MOSFET |