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G2K2P10SE - P-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ.

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Datasheet Details

Part number G2K2P10SE
Manufacturer GOFORD
File Size 560.65 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G2K2P10SE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G2K2P10SE P-Channel Enhancement Mode Power MOSFET Description The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.