G2K2P10SE Overview
The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G2K2P10SE Key Features
- 100V -3.5A < 200mΩ < 220mΩ
Datasheet Details
| Part number | G2K2P10SE |
|---|---|
| Datasheet | G2K2P10SE-GOFORD.pdf |
| File Size | 560.65 KB |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
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