G2K2P10SE
G2K2P10SE is P-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
P-Channel Enhancement Mode Power MOSFET
Description
The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l Ro HS pliant l ESD (HBM)>7KV
-100V -3.5A < 200mΩ < 220mΩ
Application l Power switch l DC/DC converters
Schematic diagram pin assignment
Ordering Information
Device G2K2P10SE
Package SOP-8
Marking...
