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G2K2P10S2E - Dual P-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ S1 S2 Schematic diagram.

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Datasheet Details

Part number G2K2P10S2E
Manufacturer GOFORD
File Size 589.66 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G2K2P10S2E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G2K2P10S2E Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. G1 G2 General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.