G2K2P10S2E Description
D1 D2 The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G2K2P10S2E Key Features
- 100V -3.5A < 200mΩ < 220mΩ
- Part: G2K2P10S2E
- Manufacturer: GOFORD
- Size: 589.66 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G2K2P10S2 | Dual P-Channel Enhancement Mode Power MOSFET |
| G2K2P10SE | P-Channel Enhancement Mode Power MOSFET |
| G2K2P10 | P-Channel Enhancement Mode Power MOSFET |
| G2K3N10 | N-Channel Enhancement Mode Power MOSFET |
| G2K3N10G | N-Channel Enhancement Mode Power MOSFET |