G2K2P10S2E Overview
D1 D2 The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G2K2P10S2E Key Features
- 100V -3.5A < 200mΩ < 220mΩ
Datasheet Details
| Part number | G2K2P10S2E |
|---|---|
| Datasheet | G2K2P10S2E-GOFORD.pdf |
| File Size | 589.66 KB |
| Manufacturer | GOFORD |
| Description | Dual P-Channel Enhancement Mode Power MOSFET |
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