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G2K2P10S2 - Dual P-Channel Enhancement Mode Power MOSFET

Download the G2K2P10S2 datasheet PDF. This datasheet also covers the G2K2P10S2E variant, as both devices belong to the same dual p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ S1 S2 Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G2K2P10S2E-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G2K2P10S2
Manufacturer GOFORD
File Size 589.66 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G2K2P10S2 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G2K2P10S2E Dual P-Channel Enhancement Mode Power MOSFET
G2K2P10SE P-Channel Enhancement Mode Power MOSFET
G2K2P10 P-Channel Enhancement Mode Power MOSFET
G2K3N10 N-Channel Enhancement Mode Power MOSFET
G2K3N10G N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G2K2P10S2E Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. G1 G2 General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.