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GSM2519 Datasheet PDF

Globaltech GSM2519

MOSFET

Part No. GSM2519
Datasheet GSM2519 Download
Manufacturer
Globaltech
Description MOSFET
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GSM2519 datasheet page 1 preview

DESCRIPTION

GSM2519, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM2519FF (DFN2X2-6L)

FEATURES

„ N-Channel 20V/4.5A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=80mΩ@VGS=1.8V „ P-Channel -20V/-4.5A,RDS(ON)=90mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=130mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=190mΩ@VGS=-1.8V „ Super high density cell design for extremely low RDS (ON) „ Exceptional on-resistance and maximum DC current capability „ DFN2X2-6L package design

APPLICATIONS

„ Power Management in Note book „ Portable Equipment „ Battery Powered System „ DC/DC Converter „ Load Switch „ DSC „ LCD Display inverter GSM2519 Top View Pin Symbol 1 S1 2 G1 3
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