GSM2519 Datasheet | Globaltech

20V N&P Pair Enhancement Mode MOSFET Product Description GSM2519, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM2519FF (DFN2X2-6L) Features - N-Channel 20V/4.5A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=80mΩ@VGS=1.8V - P-Channel -20V/-4.5A,RDS(ON)=90mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=130mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=190mΩ@VGS=-1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - DFN2X2-6L package design Applications - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Top View Pin Symbol 1 S1 2 G1...