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GSM2519 - MOSFET

Description

GSM2519, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • N-Channel 20V/4.5A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=80mΩ@VGS=1.8V.
  • P-Channel -20V/-4.5A,RDS(ON)=90mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=130mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=190mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN2X2-6L package design.

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Datasheet Details

Part number GSM2519
Manufacturer Globaltech
File Size 1.67 MB
Description MOSFET
Datasheet download datasheet GSM2519 Datasheet

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Full PDF Text Transcription

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GSM2519 20V N&P Pair Enhancement Mode MOSFET Product Description GSM2519, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM2519FF (DFN2X2-6L) Features „ N-Channel 20V/4.5A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=80mΩ@VGS=1.8V „ P-Channel -20V/-4.5A,RDS(ON)=90mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=130mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=190mΩ@VGS=-1.
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