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GSM3025S - N-Channel MOSFET

General Description

GSM3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 30V/9.0A,RDS(ON)=32mΩ@VGS=10V.
  • 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V.
  • 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TO-252-2L package design.

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Datasheet Details

Part number GSM3025S
Manufacturer Globaltech
File Size 790.62 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM3025S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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30V N-Channel Enhancement Mode MOSFET Product Description GSM3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 30V/9.0A,RDS(ON)=32mΩ@VGS=10V „ 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V „ 30V/5.0A,RDS(ON)=42mΩ@VGS=2.