GSM3025S Datasheet | Globaltech

30V N-Channel Enhancement Mode MOSFET Product Description GSM3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features - 30V/9.0A,RDS(ON)=32mΩ@VGS=10V - 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V - 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V - Super high density cell design for extremely low RDS (ON) - TO-252-2L package design Applications - DC/DC Converter - Load Switch / CCFL Inverter - Power Management in Notebook puter Packages & Pin Assignments GSM3025SDF (TO-252-2L) GSM302...