GSM3025S Overview
GSM3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM3025S Key Features
- 30V/9.0A,RDS(ON)=32mΩ@VGS=10V
- 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V
- 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V
- Super high density cell design for extremely
- TO-252-2L package design