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GSM3401S Datasheet PDF

Globaltech GSM3401S

This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor.
Part No. GSM3401S
Datasheet GSM3401S Download
Manufacturer
Globaltech
Description 30V P-Channel Enhancement Mode MOSFET
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GSM3401S datasheet page 1 preview

DESCRIPTION

GSM3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

FEATURES

● -30V/-4.0A RDS(ON)=65mΩ@VGS=-10V
● -30V/-3.2A RDS(ON)=80mΩ@VGS=-4.5V
● -30V/-1.0A RDS(ON)=105mΩ@VGS=-2.5V
● Suit for -2.5V Gate Drive

APPLICATIONS

APPLICATIONS

● Notebook
● LED Display
● DC-DC System
● LCD Panel GSM3401S Packages & Pin Assignments GSM3401SZF(SOT-23) Pin

DESCRIPTION

1 Gate 2 Source 3 Drain 1 Ordering Information GS P/N GSM3401S Z F Package Code Halogen Free/ Pb Free Code Marking Information Part Number GSM3401SZF Package SOT-23 Part Marking 3SXW Quantity 3000PCS

ABSOLUTE MAXIMUM RATINGS

TA=25ºC unless otherwise noted Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TJ=150℃) TA=25ºC TA=70ºC Pulsed...
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