GSM3401S Datasheet 30V P-Channel Enhancement Mode MOSFET

Manufacturer: Globaltech

GSM3401S 30v p-channel enhancement mode mosfet by Globaltech - Datasheet Preview

Datasheet Details

Part number	GSM3401S
Manufacturer	Globaltech
File Size	668.59 KB
Description	30V P-Channel Enhancement Mode MOSFET
Download	GSM3401S Download (PDF)

General Description

GSM3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Overview

GSM3401S 30V P-Channel Enhancement Mode MOSFET Product.

Key Features

-30V/-4.0A RDS(ON)=65mΩ@VGS=-10V.
-30V/-3.2A RDS(ON)=80mΩ@VGS=-4.5V.
-30V/-1.0A RDS(ON)=105mΩ@VGS=-2.5V.
Suit for -2.5V Gate Drive.

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