Globaltech GSM3406AS
N-Channel MOSFET
DESCRIPTION
GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.FEATURES
30V/2.8A,RDS(ON)=45mΩ@VGS=10V 30V/2.4A,RDS(ON)=55mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package designAPPLICATIONS
Power Management in Note book LED Display DC-DC System LCD Panel Packages & Pin Assignments GSM3406ASJZF(SOT-23) GSM3406AS 1 Gate 2 Source 3 Drain Ordering Information GS P/N GSM3406AS P F Package Code Halogen Free/ Pb Free Code 1 Marking Information Part Number GSM3406ASJZF Package SOT-23ABSOLUTE MAXIMUM RATINGS
(TA=25ºC unless otherwise noted) Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Parameter Drain-Source Voltage Gate