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30V N-Channel Enhancement Mode MOSFET
Product Description
GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
30V/2.8A,RDS(ON)=45mΩ@VGS=10V 30V/2.4A,RDS(ON)=55mΩ@VGS=4.5V Super high density cell design for extremely
low RDS (ON) SOT-23 package design
Applications
Power Management in Note book LED Display DC-DC System LCD Panel
Packages & Pin Assignments
GSM3406ASJZF(SOT-23)
GSM3406AS
1 Gate 2 Source 3 Drain
Ordering Information
GS P/N
GSM3406AS P F
Package Code Halogen Free/ Pb Free Code
www.gs-power.