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GSM3414S - 20V N-Channel Enhancement Mode MOSFET

Description

GSM3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/5.8A,RDS(ON)=25mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet Details

Part number GSM3414S
Manufacturer Globaltech
File Size 367.00 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet GSM3414S Datasheet

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Full PDF Text Transcription

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20V N-Channel Enhancement Mode MOSFET Product Description GSM3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features  20V/5.8A,RDS(ON)=25mΩ@VGS=4.
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