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GSM3414S Datasheet PDF

Globaltech GSM3414S

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
Part No. GSM3414S
Datasheet GSM3414S Download
Manufacturer
Globaltech
Description 20V N-Channel Enhancement Mode MOSFET
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GSM3414S datasheet page 1 preview

DESCRIPTION

GSM3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

FEATURES

● 20V/5.8A,RDS(ON)=25mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23 package design

APPLICATIONS

● Portable Equipment
● Battery Powered System
● Net Working System GSM3414S Packages & Pin Assignments GSM3414SZF(SOT-23) Pin

DESCRIPTION

1 Gate 2 Source 3 Drain 1 Ordering Information GS P/N GSM3414S Z F Package Code Halogen Free/ Pb Free Code Marking Information Part Number GSM3414SZF Package SOT-23 Part Marking 14XW Quantity 3000pcs

ABSOLUTE MAXIMUM RATINGS

TA=25ºC unless otherwise noted Symbol VDS VGS Parameter Dra...
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