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GSM3415 - P-Channel MOSFET

Description

GSM3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) ,low gate charge.

Features

  • -20V/-4.9A,RDS(ON)=45mΩ@VGS=-4.5V.
  • -20V/-3.4A,RDS(ON)=58mΩ@VGS=-2.5V.
  • -20V/-2.2A,RDS(ON)=85mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-3S package design.

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Datasheet Details

Part number GSM3415
Manufacturer Globaltech
File Size 922.66 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM3415 Datasheet

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Full PDF Text Transcription

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GSM3415 20V P-Channel Enhancement Mode MOSFET Product Description GSM3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) ,low gate charge. These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features  -20V/-4.9A,RDS(ON)=45mΩ@VGS=-4.5V  -20V/-3.4A,RDS(ON)=58mΩ@VGS=-2.5V  -20V/-2.2A,RDS(ON)=85mΩ@VGS=-1.
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