GSM3415 Datasheet PDF

DESCRIPTION

GSM3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) ,low gate charge. These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

FEATURES

● -20V/-4.9A,RDS(ON)=45mΩ@VGS=-4.5V
● -20V/-3.4A,RDS(ON)=58mΩ@VGS=-2.5V
● -20V/-2.2A,RDS(ON)=85mΩ@VGS=-1.8V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23-3S package design

APPLICATIONS

● Portable Equipment
● Battery Powered System
● Net Working System Packages & Pin Assignments GSM3415ZF(SOT-23-3S) 1 Gate 2 Source 3 Drain GSM3415 1 Ordering Information Part Number GSM3415ZF Marking Information Package SOT-23-3S Quantity R