GSM3415 Datasheet | Globaltech

20V P-Channel Enhancement Mode MOSFET Product Description GSM3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) ,low gate charge. These devices are particularly suited for low Voltage power management, such as smart Phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Features - -20V/-4.9A,RDS(ON)=45mΩ@VGS=-4.5V - -20V/-3.4A,RDS(ON)=58mΩ@VGS=-2.5V - -20V/-2.2A,RDS(ON)=85mΩ@VGS=-1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23-3S package...