DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-30V, -4.1A, RDS(ON)=65mΩ@VGS=-10V Fast switching Suit for -2.5V Gate Drive APPLICATIONS
Green Device Available SOT-23 package design APPLICATIONS
Notebook Load Switch Battery Protection Hand-held Instruments Packages & Pin Assignments GSM3611PJZF (SOT-23) Top Views Pin DESCRIPTION
1 Gate 2 Source 3 Drain Ordering Information GSM3611P 1 Marking Information Part Number GSM3611PJZF Package SOT-23 Part Marking OYWMM Quantity 3000pcs ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted Symbol Paramet
Globaltech
