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GSM3611P - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V, -4.1A, RDS(ON)=65mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -2.5V Gate Drive.

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Datasheet Details

Part number GSM3611P
Manufacturer Globaltech
File Size 619.21 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM3611P Datasheet

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Full PDF Text Transcription

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GSM3611P 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -30V, -4.1A, RDS(ON)=65mΩ@VGS=-10V „ Fast switching „ Suit for -2.5V Gate Drive Applications „ Green Device Available „ SOT-23 package design Applications „ Notebook „ Load Switch „ Battery Protection „ Hand-held Instruments Packages & Pin Assignments GSM3611PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information GSM3611P www.
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