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GSM3612P - 30V N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for 2.5V Gate Drive.

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Datasheet Details

Part number GSM3612P
Manufacturer Globaltech
File Size 504.79 KB
Description 30V N-Channel MOSFETs
Datasheet download datasheet GSM3612P Datasheet

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Full PDF Text Transcription

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GSM3612P 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V  Improved dv/dt capability  Fast switching  Suit for 2.5V Gate Drive Applications  Green Device Available  SOT-23 package design Applications  Notebook  Load Switch  LED applications GSM3612P Packages & Pin Assignments GSM3612PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain www.gs-power.
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