Datasheet Details
| Part number | GSM3612P |
|---|---|
| Manufacturer | Globaltech |
| File Size | 504.79 KB |
| Description | 30V N-Channel MOSFETs |
| Download | GSM3612P Download (PDF) |
|
|
| Part number | GSM3612P |
|---|---|
| Manufacturer | Globaltech |
| File Size | 504.79 KB |
| Description | 30V N-Channel MOSFETs |
| Download | GSM3612P Download (PDF) |
|
|
|
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
GSM3612P 30V N-Channel MOSFETs Product.
| Part Number | Description |
|---|---|
| GSM3611P | P-Channel MOSFET |
| GSM3025S | N-Channel MOSFET |
| GSM3106ZF | 30V N-Channel MOSFETs |
| GSM3112Z | 30V N-Channel MOSFETs |
| GSM3118JZF | 30V N-Channel MOSFETs |
| GSM3131JZF | 30V P-Channel MOSFET |
| GSM3385ZF | 30V P-Channel MOSFET |
| GSM3401S | 30V P-Channel Enhancement Mode MOSFET |
| GSM3406AS | N-Channel MOSFET |
| GSM3414S | 20V N-Channel Enhancement Mode MOSFET |