GSM3612P Datasheet | Globaltech

30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V - Improved dv/dt capability - Fast switching - Suit for 2.5V Gate Drive Applications - Green Device Available - SOT-23 package design Applications - Notebook - Load Switch - LED applications Packages & Pin Assignments GSM3612PJZF (SOT-23) Top Views Pin Description Gate Source Drain .gs-power. 1 Ordering Information Marking Information Part Number GSM3612PJZF Package SOT-23 Part Marking PXWMM Quantity...