Globaltech GSM3612P
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | GSM3612P |
|---|---|
| Datasheet | GSM3612P Download |
| Manufacturer |  Globaltech |
| Description | 30V N-Channel MOSFETs |
| Buy | Stock & Price |
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
● 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V● Improved dv/dt capability
● Fast switching
● Suit for 2.5V Gate Drive
APPLICATIONS
● Green Device Available● SOT-23 package design
APPLICATIONS
● Notebook● Load Switch
● LED applications GSM3612P Packages & Pin Assignments GSM3612PJZF (SOT-23) Top Views Pin
DESCRIPTION
1 Gate 2 Source 3 Drain 1 Ordering Information Marking Information Part Number GSM3612PJZF Package SOT-23 Part Marking PXWMM Quantity 3000pcsABSOLUTE MAXIMUM RATINGS
TC=25ºC Unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current1 TC=25℃ TC=100℃ Power Dissipation (Tc=25℃) PD Power Dissipation (Derate above 25℃) TJ Operating Junction Temperature Range TSTG Storage Temperature Range RθJA Thermal Resistance-Junction to Ambient Typical 30 ±12 5.3 3.4 21.2 1.56 0.012 -55 to +150 -55 to...
