GSM3911P Datasheet | Globaltech

30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - -30V, -4.1A, RDS(ON)=55mΩ@VGS=-10V - Fast switching - Suit for -4.5V Gate Drive Applications - Green Device Available - SOT-23 package design Applications - Notebook - Load Switch - Battery Protection - Hand-held Instruments Packages & Pin Assignments GSM3911PJZF (SOT-23) Top Views Pin Description Gate Source Drain .gs-power. 1 Ordering Information Part Number GSM3911PJZF Marking Information Package SOT-23 Quantity...