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GSM3911P Datasheet 30V P-Channel MOSFET

Manufacturer: Globaltech

Datasheet Details

Part number GSM3911P
Manufacturer Globaltech
File Size 493.99 KB
Description 30V P-Channel MOSFET
Download GSM3911P Download (PDF)

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

GSM3911P 30V P-Channel MOSFETs Product.

Key Features

  • -30V, -4.1A, RDS(ON)=55mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.