Globaltech GSM3911P
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | GSM3911P |
|---|---|
| Datasheet | GSM3911P Download |
| Manufacturer |  Globaltech |
| Description | 30V P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
● -30V, -4.1A, RDS(ON)=55mΩ@VGS=-10V● Fast switching
● Suit for -4.5V Gate Drive
APPLICATIONS
● Green Device Available● SOT-23 package design
APPLICATIONS
● Notebook● Load Switch
● Battery Protection
● Hand-held Instruments GSM3911P Packages & Pin Assignments GSM3911PJZF (SOT-23) Top Views Pin
DESCRIPTION
1 Gate 2 Source 3 Drain 1 Ordering Information Part Number GSM3911PJZF Marking Information Package SOT-23 Quantity 3000pcs GSM3911PABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current TA=25℃ TA=100℃ Power Dissipation (TA=25℃) PD Power Dissipation (Derate above 25℃) TJ Operating Junction Temperature Range TSTG Storage Temperature Range RθJA Thermal Resistance-Junction to Ambient Typical -30 ±20 -4.1 -2.6 -16.4 1.56 0.012 -55 to +150 -55 to +150...
