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GSM3911P - 30V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V, -4.1A, RDS(ON)=55mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number GSM3911P
Manufacturer Globaltech
File Size 493.99 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet GSM3911P Datasheet

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Full PDF Text Transcription

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GSM3911P 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  -30V, -4.1A, RDS(ON)=55mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available  SOT-23 package design Applications  Notebook  Load Switch  Battery Protection  Hand-held Instruments GSM3911P Packages & Pin Assignments GSM3911PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain www.gs-power.
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