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GSM3912P
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
30V, 6.5A, RDS(ON)=24mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available SOT-23 package design
Applications
MB / VGA / Vcore Load Switch Hand-Held Instrument
Packages & Pin Assignments
GSM3912PJZF (SOT-23)
Top Views Pin Description 1 Gate 2 Source 3 Drain
Ordering Information
GSM3912P
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GSM3912P Datasheet
