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GSM3912P Datasheet N-Channel MOSFET

Manufacturer: Globaltech

Datasheet Details

Part number GSM3912P
Manufacturer Globaltech
File Size 573.55 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM3912P Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

GSM3912P 30V N-Channel MOSFETs Product.

Key Features

  • 30V, 6.5A, RDS(ON)=24mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • SOT-23 package design.