GSM3912P Datasheet | Globaltech

30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 30V, 6.5A, RDS(ON)=24mΩ@VGS=10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - SOT-23 package design Applications - MB / VGA / Vcore - Load Switch - Hand-Held Instrument Packages & Pin Assignments GSM3912PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information .gs-power. 1 Marking Information Part Number GSM3912PJZF Package SOT-23 Part Marking IYWMM Quantity 3000pcs...