GSM6332 Datasheet PDF

Globaltech GSM6332

The GSM6332 is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

Part No.	GSM6332
Datasheet	GSM6332 Download
Manufacturer	Globaltech
Description	MOSFET
Buy	Stock & Price

DESCRIPTION

FEATURES

N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-1.0A,RDS(ON)= 600mΩ@VGS=-4.5V -20V/-0.8A,RDS(ON)= 800mΩ@VGS=-2.5V -20V/-0.7A,RDS(ON)= 1440mΩ@VGS=-1.8V Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design

APPLICATIONS

Load Switch for Portable Devices, Smart Phones, Pagers. Packages & Pin Assignments GSM6332X6F(SOT-363/SC-70-6L) GSM6332 1 Source 1 2 Gate 1 3 Drain 2 4 Source 2 5 Gate 2 6 Drain 1