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GSM6332 - MOSFET

Description

The GSM6332 is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) , low gate charge.

Features

  • N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V.
  • P-Channel -20V/-1.0A,RDS(ON)= 600mΩ@VGS=-4.5V -20V/-0.8A,RDS(ON)= 800mΩ@VGS=-2.5V -20V/-0.7A,RDS(ON)= 1440mΩ@VGS=-1.8V.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • SOT-363 package design.

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Datasheet Details

Part number GSM6332
Manufacturer Globaltech
File Size 1.42 MB
Description MOSFET
Datasheet download datasheet GSM6332 Datasheet

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Full PDF Text Transcription

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N & P Pair Enhancement Mode MOSFET Product Description The GSM6332 is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V „ P-Channel -20V/-1.0A,RDS(ON)= 600mΩ@VGS=-4.5V -20V/-0.8A,RDS(ON)= 800mΩ@VGS=-2.5V -20V/-0.7A,RDS(ON)= 1440mΩ@VGS=-1.
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