Datasheet Summary
30V N-Channel Enhancement Mode MOSFET
Product Description
GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Packages & Pin Assignments
GSM6562TSF(TSOP-6)
Features
- 30V/3.6A,RDS(ON)=70mΩ@VGS=10V
- 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V
- 30V/2.2A,RDS(ON)=95mΩ@VGS=2.5V
- Super high density cell design for extremely low RDS (ON)
- TSOP-6 package design
Applications
- Power Management in Note book
- LED Display
- DC-DC System
- LCD Panel
1 Gate1 4 Drain2 2 Source2 5...