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GSM6562 - N-Channel Power MOSFET

Description

GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/3.6A,RDS(ON)=70mΩ@VGS=10V.
  • 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V.
  • 30V/2.2A,RDS(ON)=95mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TSOP-6 package design.

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Datasheet Details

Part number GSM6562
Manufacturer Globaltech
File Size 502.77 KB
Description N-Channel Power MOSFET
Datasheet download datasheet GSM6562 Datasheet

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30V N-Channel Enhancement Mode MOSFET Product Description GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM6562TSF(TSOP-6) Features „ 30V/3.6A,RDS(ON)=70mΩ@VGS=10V „ 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V „ 30V/2.2A,RDS(ON)=95mΩ@VGS=2.
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