Globaltech GSM6562
N-Channel Power MOSFET
DESCRIPTION
GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM6562TSF(TSOP-6)FEATURES
30V/3.6A,RDS(ON)=70mΩ@VGS=10V 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V 30V/2.2A,RDS(ON)=95mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package designAPPLICATIONS
Power Management in Note book LED Display DC-DC System LCD Panel 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 Ordering Information GS P/N GSM6562 P F Package Code Halogen Free/ Pb Free Code GSM6562 1 Marking Information Part Number GSM6562TSF Package TSOP-6ABSOLUTE MAXIMUM RATINGS
(TA=25ºC unless otherwise noted) Symbol VDSS VGSS ID IDM IS