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GSM6911P Datasheet PDF

Globaltech GSM6911P

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSM6911P
Datasheet GSM6911P Download
Manufacturer
Globaltech
Description P-Channel MOSFET
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GSM6911P datasheet page 1 preview

DESCRIPTION

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ -60V, -3.1A, RDS(ON)=190mΩ@VGS=-10V „ Improved dv/dt capability „ Fast switching „ 100% EAS Guaranteed „ Green Device Available „ SOT-23 package design

APPLICATIONS

„ Motor Drive „ Power Tools „ LED Lighting Packages & Pin Assignments GSM6911PJZF (SOT-23) Top Views Pin

DESCRIPTION

1 Gate 2 Source 3 Drain Ordering Information GSM6911P 1 Marking Information Part Number GSM6911PJZF Package SOT-23 Part Marking MYWMM Quantity 3000pcs

ABSOLUTE MAXIMUM RATINGS

TA=25ºC Unless otherwise noted Symbol Parameter VDS VGS ID ID
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