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GSM6911P - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V, -3.1A, RDS(ON)=190mΩ@VGS=-10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • SOT-23 package design.

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Datasheet Details

Part number GSM6911P
Manufacturer Globaltech
File Size 622.32 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM6911P Datasheet

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Full PDF Text Transcription

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GSM6911P 60V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -60V, -3.1A, RDS(ON)=190mΩ@VGS=-10V „ Improved dv/dt capability „ Fast switching „ 100% EAS Guaranteed „ Green Device Available „ SOT-23 package design Applications „ Motor Drive „ Power Tools „ LED Lighting Packages & Pin Assignments GSM6911PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information GSM6911P www.gs-power.
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