Globaltech GSM8205
N-Channel Power MOSFET
DESCRIPTION
GSM8205, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM8205TSF(TSOP-6)FEATURES
20V/5A,RDS(ON)=29mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=37mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=50mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 & TSSOP-8P package designAPPLICATIONS
Load Switch Portable Equipment Battery Powered System GSM8205TSSF(TSSOP-8P) Pin No 1 2 3 - Function Source 1 Drain 1/2 Source 2 - Pin No 4 5 6 - Function Gate 2 Drain 1/2 Gate 1 - Pin No 1 2 3 4 Function Drain 1/2 Source 1 Sour