GSM8205 Datasheet | Globaltech

20V N-Channel Enhancement Mode MOSFET Product Description GSM8205, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM8205TSF(TSOP-6) Features - 20V/5A,RDS(ON)=29mΩ@VGS=4.5V - 20V/3.2A,RDS(ON)=37mΩ@VGS=2.5V - 20V/2.4A,RDS(ON)=50mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TSOP-6 & TSSOP-8P package design Applications - Load Switch - Portable Equipment - Battery Powered System GSM8205TSSF(TSSOP-8P) Pin No 1 2 3 - Function Source 1 Drain 1/2 Source 2 - Pin No 4 5 6 - Function Gate 2 Drain 1/2 Gate 1 - Pin No 1 2 3 Function Drain 1/2 Source 1...