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GSM8412 - N-Channel MOSFET

General Description

GSM8412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 100V/3.6A,RDS(ON)=300mΩ@VGS=10V.
  • 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-223 package design.

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Datasheet Details

Part number GSM8412
Manufacturer Globaltech
File Size 929.58 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM8412 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM8412 100V N-Channel Enhancement Mode MOSFET Product Description GSM8412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM8412XF (SOT-223) Features „ 100V/3.6A,RDS(ON)=300mΩ@VGS=10V „ 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V „ Super high density cell design for extremely low RDS (ON) „ SOT-223 package design Applications „ Motor and Load Control „ Power Management in White LED System „ Push Pull Converter „ LCD TV Inverter & AC/DC Inverter Systems.