GSM8412 Datasheet | Globaltech

100V N-Channel Enhancement Mode MOSFET Product Description GSM8412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM8412XF (SOT-223) Features - 100V/3.6A,RDS(ON)=300mΩ@VGS=10V - 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - SOT-223 package design Applications - Motor and Load Control - Power Management in White LED System - Push Pull Converter - LCD TV Inverter & AC/DC Inverter Systems. 1 Gate 2 Drain 3 Source Ordering Information GS P/N GSM8412 X F Package Code Pb Free Code .gs-power. 1 Marking Information Part Number GSM8412XF Package SOT-223 Part Marking 8412YYWW Quantity...