GSM8412 Overview
GSM8412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM8412XF (SOT-223).
GSM8412 Key Features
- 100V/3.6A,RDS(ON)=300mΩ@VGS=10V
- 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V
- Super high density cell design for extremely
- SOT-223 package design