GSM8968 Datasheet | Globaltech

100V N-Channel Enhancement Mode MOSFET Product Description GSM8968, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low inline power loss are needed in mercial industrial surface mount applications. Features - 100V/3.0A,RDS(ON)=300mΩ@VGS=10V - 100V/2.0A,RDS(ON)=310mΩ@ VGS=4.5V - Super high density cell design for extremely low RDS(ON) - SOT-89-3L package design Applications - Motor and Load Control - Power Management in White LED System - Push Pull Converter - LCD TV Inverter & AD/DC Inverter Systems. Packages & Pin Assignments GSM8968YF(SOT-89-3L) Pin Description 1 Gate 2 Drain 3 Source .gs-power. 1 Ordering Information Part Number GSM8968YF Marking Information Package SOT-89-3L Quantity Reel 1000...