GSM8968 Description
GSM8968, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low inline power loss are needed in mercial industrial surface mount applications.
GSM8968 Key Features
- 100V/3.0A,RDS(ON)=300mΩ@VGS=10V
- 100V/2.0A,RDS(ON)=310mΩ@ VGS=4.5V
- Super high density cell design for extremely low
- SOT-89-3L package design