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GSM8968 - N-Channel MOSFET

General Description

GSM8968, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low inline power loss are needed in commercial industrial surface mount applications.

Key Features

  • 100V/3.0A,RDS(ON)=300mΩ@VGS=10V.
  • 100V/2.0A,RDS(ON)=310mΩ@ VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT-89-3L package design.

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Datasheet Details

Part number GSM8968
Manufacturer Globaltech
File Size 890.50 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM8968 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM8968 100V N-Channel Enhancement Mode MOSFET Product Description GSM8968, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low inline power loss are needed in commercial industrial surface mount applications. Features „ 100V/3.0A,RDS(ON)=300mΩ@VGS=10V „ 100V/2.0A,RDS(ON)=310mΩ@ VGS=4.5V „ Super high density cell design for extremely low RDS(ON) „ SOT-89-3L package design Applications „ Motor and Load Control „ Power Management in White LED System „ Push Pull Converter „ LCD TV Inverter & AD/DC Inverter Systems. Packages & Pin Assignments GSM8968YF(SOT-89-3L) Pin Description 1 Gate 2 Drain 3 Source GSM8968 www.gs-power.