GSM8931 Datasheet | Globaltech

30V P-Channel Enhancement Mode MOSFET Product Description GSM8931, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features - -30V/-4.6A,RDS(ON)=36mΩ@VGS=-10V - -30V/-3.6A,RDS(ON)=46mΩ@ VGS=-4.5V - Super high density cell design for extremely low RDS(ON) - SOT-89-3L package design Applications - Motor and Load Control - LCD TV Inverter & AD/DC Inverter Systems. - Backlight Inverter for LCD Display - Load Switch - CCFL Inverter Packages & Pin Assignments GSM8931YF(SOT-89-3L) Pin Description 1 Gate 2 Drain 3 Source .gs-power. 1 Ordering Information Part Number GSM8931YF Marking Information Package SOT-89-3L Quantity Reel 1000...