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GSM8931 - P-Channel MOSFET

General Description

GSM8931, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -30V/-4.6A,RDS(ON)=36mΩ@VGS=-10V.
  • -30V/-3.6A,RDS(ON)=46mΩ@ VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT-89-3L package design.

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Datasheet Details

Part number GSM8931
Manufacturer Globaltech
File Size 746.48 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM8931 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM8931 30V P-Channel Enhancement Mode MOSFET Product Description GSM8931, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ -30V/-4.6A,RDS(ON)=36mΩ@VGS=-10V „ -30V/-3.6A,RDS(ON)=46mΩ@ VGS=-4.5V „ Super high density cell design for extremely low RDS(ON) „ SOT-89-3L package design Applications „ Motor and Load Control „ LCD TV Inverter & AD/DC Inverter Systems. „ Backlight Inverter for LCD Display „ Load Switch „ CCFL Inverter Packages & Pin Assignments GSM8931YF(SOT-89-3L) Pin Description 1 Gate 2 Drain 3 Source GSM8931 www.gs-power.