GSMDC0966X Datasheet | Globaltech

100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 100V, 45A, RDS(ON)=18mΩ@VGS=10V - Improved dv/dt capability - Fast switching - 100% EAS guaranteed - Green Device Available - DFN5X6-8L package design Applications - Networking - Load Switch - LED Applications Packages & Pin Assignments GSMDC0966XFF (DFN5X6-8L) Bottom View Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain .gs-power. 1 Ordering Information GS P/N GSMDC0966X F F Package Code Pb Free Code Part Number GSMDC0966XFF Package DFN5X6-8L Marking Information Absolute Maximum...