GSMDC2209V Datasheet | Globaltech

20V P-Channel Dual MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - -20V, -7.5A, RDS(ON)=33mΩ@VGS=-4.5V - Improved dv/dt capability - Fast switching - Green Device Available - DFN3X3-8L package design Applications - MB / VGA / Vcore - POL Applications - Networking Packages & Pin Assignments GSMDC2209VFF (DFN3X3-8L) Top Views Pin Description 1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 .gs-power. 1 Ordering Information GS P/N GSMDC2209V F F Package Code Pb Free Code Part Number GSMDC2209VFF Package DFN3X3-8L Marking Information Absolute...