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GSMDC2209V - Dual P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -20V, -7.5A, RDS(ON)=33mΩ@VGS=-4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • DFN3X3-8L package design.

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Datasheet Details

Part number GSMDC2209V
Manufacturer Globaltech
File Size 551.35 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet GSMDC2209V Datasheet

Full PDF Text Transcription for GSMDC2209V (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSMDC2209V. For precise diagrams, and layout, please refer to the original PDF.

GSMDC2209V 20V P-Channel Dual MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced ...

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ld effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -20V, -7.5A, RDS(ON)=33mΩ@VGS=-4.

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