GSMDC2116M Datasheet | Globaltech

20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V - P-Channel -20V, -4.7A, RDS(ON)=100mΩ@VGS=-4.5V - Fast switching - Suit for -1.8V/1.8V Gate Drive Applications - Green Device Available - DFN2X3-8L package design Applications - Notebook - Load Switch - Networking - Hand-Held Instruments Packages & Pin Assignments GSMDC2116MFF (DFN2X3-8L) Bottom Views Pin Description 1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 .gs-power. 1 Ordering Information GS P/N GSMDC2116M F F Package...