Full PDF Text Transcription for GSMDC2116M (Reference)
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GSMDC2116M. For precise diagrams, and layout, please refer to the original PDF.
GSMDC2116M 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This ...
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power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V P-Channel -20V, -4.7A, RDS(ON)=100mΩ@VGS=-4.5V Fast switching Suit for -1.8V/1.
GSMDC2116M Datasheet
