DESCRIPTION
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V P-Channel -20V, -4.7A, RDS(ON)=100mΩ@VGS=-4.5V Fast switching Suit for -1.8V/1.8V Gate Drive APPLICATIONS
Green Device Available DFN2X3-8L package design APPLICATIONS
Notebook Load Switch Networking Hand-Held Instruments Packages & Pin Assignments GSMDC2116MFF (DFN2X3-8L) GSMDC2116M Bottom Views Pin DESCRIPTION
1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 1 Ordering Information GS P/N GSMDC2116M F F Package Code
Globaltech
