GSMDC2604Z Datasheet | Globaltech

20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 20V, 80A, RDS(ON)=3.5mΩ@VGS=10V - Improved dv/dt capability - Fast switching - 100% EAS guaranteed - Green Device Available - DFN3X3-8L package design Applications - MB / VGA / Vcore - POL Applications - SMPS 2nd SR Packages & Pin Assignments GSMDC2604ZFF (DFN3X3-8L) Top View Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain .gs-power. 1 Ordering Information GS P/N GSMDC2604Z F F Package Code Pb Free Code Part Number GSMDC2604ZFF Package DFN3X3-8L Marking Information Quantity 3000...