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GSMDC2604Z - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V, 80A, RDS(ON)=3.5mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • DFN3X3-8L package design.

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Datasheet preview – GSMDC2604Z

Datasheet Details

Part number GSMDC2604Z
Manufacturer Globaltech
File Size 515.78 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDC2604Z Datasheet
Additional preview pages of the GSMDC2604Z datasheet.

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Full PDF Text Transcription

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GSMDC2604Z 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 20V, 80A, RDS(ON)=3.
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