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HM1N6035 - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test.

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Full PDF Text Transcription for HM1N6035 (Reference)

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 Silicon N-Channel Power MOSFET HM1N6035 General Description： VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar...

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nnel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS standard. Features： z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and ch

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