HM2302BSR - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM2302BSR
Manufacturer	H&M Semiconductor
File Size	732.90 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302BSR Datasheet
Additional preview pages of the HM2302BSR datasheet.

The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipme

ES.
RDS(ON)= 270 mΩ @VGS=4.5V.
RDS(ON)= 330 mΩ @VGS=2.5V.
RDS(ON)= 450 mΩ @VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302 G1 2S Marking and pin Assignment SOT-523 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V.

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Published: Nov 27, 2018 |