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HM2302BWKR - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • The HM2302BWKR uses advanced trench technology to.

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HM2302BWKR +0%:.5 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to SURYLGHexcellent RDS(ON), low gate charge and operation ZLWKJDWHvoltages as low as 1.8V, in the small SOT363 IRRWSULQW,Wcan be used for a wide variety of applications, LQFOXGLQJload switching, low current inverters and low FXUUHQW'&DC converters.It is ESD protected. VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON) <270m RDS(ON) <330m RDS(ON) <450m (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.