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HM2309A - P-Channel Enhancement Mode Power MOSFET

General Description

The HM2309A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

Key Features

  • VDS =-60V,ID =-4A RDS(ON).

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HM2309A P-Channel Enhancement Mode Power MOSFET Description The HM2309A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.