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HM2309B - P-Channel Enhancement Mode Power MOSFET

General Description

The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦188mΩ@VGS=-10V.
  • RDS(ON)≦266mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

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HM2309 P-Channel Enhancement Mode Power MOSFET
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HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦188mΩ@VGS=-10V ● RDS(ON)≦266mΩ@VGS=-4.