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HM2309C - P-Channel Enhancement Mode Power MOSFET

General Description

HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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+0& P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE -60V/-3.0A, RDS(ON) = 150m-ohm (Typ.) @VGS = -10V -60V/-2.5A, RDS(ON) = 185m-ohm @VGS = -4.