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HM3710 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM3710 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM3710

Datasheet Details

Part number	HM3710
Manufacturer	H&M Semiconductor
File Size	438.65 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM3710 Datasheet
Additional preview pages of the HM3710 datasheet.

Product details

Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) Schematic diagram.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation +0.

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Published: Jul 1, 2025 |