Datasheet4U Logo Datasheet4U.com

HM3710K - N-Channel Enhancement Mode Power MOSFET

Description

The HM3710K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) Sc hematic diagram.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation HM3710K.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM3-6514-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-6514B-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-6514S-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-65764 High Speed CMOS SRAM Matra Design Semiconductor
HM3-65787 High Speed CMOS SRAM Matra Design Semiconductor

Other Datasheets by H&M Semiconductor

Part Number Description
HM3710 N-Channel Enhancement Mode Power MOSFET
HM3018 N-Channel Enhancement Mode Power MOSFET
HM3018JR N-Channel Enhancement Mode Power MOSFET
HM3018KR N-Channel Enhancement Mode Power MOSFET
HM3018SR N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM3710K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3710K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Published: |