The HM60P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
| Part number | HM60P06 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 505.46 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM60P06 Datasheet
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Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM60P06. For precise diagrams, and layout, please refer to the original PDF.
HM60P06 P-Channel Enhancement Mode Power MOSFET Description The HM60P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This...
| Part Number | Description |
|---|---|
| HM60P06K | P-Channel Enhancement Mode Power MOSFET |
| HM603K | N&P-Channel complementary Power MOSFET |
| HM605K | N&P-Channel V Complementary MOSFET |
| HM607K | N&P-Channel V Complementary MOSFET |
| HM609K | N&P-Channel V Complementary MOSFET |
| HM60N02 | MOSFET |
| HM60N02K | MOSFET |
| HM60N03 | N-Channel Enhancement Mode Power MOSFET |
| HM60N03D | N-Channel Enhancement Mode Power MOSFET |
| HM60N03K | N-Channel Enhancement Mode Power MOSFET |
