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HM60P06K - P-Channel Enhancement Mode Power MOSFET

General Description

The HM60P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Key Features

  • VDS =-60V,ID =-60A RDS(ON).

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Full PDF Text Transcription for HM60P06K (Reference)

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HM60P06K P-Channel Enhancement Mode Power MOSFET Description The HM60P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .Th...

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ology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.