Datasheet4U Logo Datasheet4U.com

HM840F - 500V N-Channel MOSFET

This page provides the datasheet information for the HM840F, a member of the HM840 500V N-Channel MOSFET family.

Datasheet Summary

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 9.0A, 500V, RDS(on) = 0.85Ω @VGS = 10 V.
  • Low gate charge ( typical 30nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Si.

📥 Download Datasheet

Datasheet preview – HM840F

Datasheet Details

Part number HM840F
Manufacturer H&M Semiconductor
File Size 297.89 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet HM840F Datasheet
Additional preview pages of the HM840F datasheet.

📁 Similar Datasheet

  • HM80N03K - N-Channel Power MOSFET (H&M semi)
  • HM810 - Ultra-compact high-power electromagnetic relay (Hongfa Technology)
  • HM8202 - Standalone Li-Ion Switch Mode Battery Charger (H&M semi)
  • HM82C11 - Printer Adapter Interface (HMC)
  • HM8348 - Mouse Controller (HMC)
  • HM86171 - Color Pallete RAMDAC (HMC)
  • HM879 - SILICON NPN EPITAXIAL TYPE TRANSISTOR (Hi-Sincerity Mocroelectronics)
  • HM879 - SILICON PNP EPITAXIAL TYPE TRANSISTOR (GME)
  • HM879 - NPN Transistor (JCST)
  • HM8810A - Dual N-Channel MOSFET (VBsemi)
Other Datasheets by H&M Semiconductor
  • HM840 - 500V N-Channel MOSFET
  • HM8002D - mono class AB audio power amplifier
  • HM803 - Low-Power Microprocessor Power Monitoring and Reset Circuit
  • HM809 - Low-Power Microprocessor Power Monitoring and Reset Circuit
  • HM80N03 - N-Channel Enhancement Mode Power MOSFET
  • HM80N03KA - N-Channel Enhancement Mode Power MOSFET
  • HM80N04K - N-Channel Enhancement Mode Power MOSFET
  • HM80N06 - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM840 / HM840F +0840 / +0840F 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 9.0A, 500V, RDS(on) = 0.
Published: |