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HM8N02MR Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM8N02MR N-Channel Enhancement Mode Power MOSFET.

General Description

The HM8N02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

General

Key Features

  • VDS = 20V,ID = 8.0A RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 12mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram 8N02 Marking and pin assignment.

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