Datasheet4U Logo Datasheet4U.com

HM8N100F Datasheet N-channel Enhanced Vdmosfet

Manufacturer: H&M Semiconductor

Overview: HM8N100F General.

General Description

: HM8N100F , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-220F, which accords with the RoHS standard.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanche energy Test.

HM8N100F Distributor & Price

Compare HM8N100F distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.