HM8N65I - 650V N-Channel MOSFET

This page provides the datasheet information for the HM8N65I, a member of the HM8N65K 650V N-Channel MOSFET family.

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM8N65I
Manufacturer	H&M Semiconductor
File Size	735.57 KB
Description	650V N-Channel MOSFET
Datasheet	HM8N65I Datasheet
Additional preview pages of the HM8N65I datasheet.

HM8N65I Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

8.0A, 650V, RDS(on) = 1.26 @VGS = 10 V.
Low gate charge ( typical 15nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D TO-252 TO-251.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Vo.

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Other Datasheets by H&M Semiconductor

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HM8N65F - 650V N-Channel MOSFET
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Published: Jun 30, 2025 |