HM8N65I Datasheet 650v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM8N65K/HM8N65I HM8N65K/HM8N65I 650V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	HM8N65I
Manufacturer	H&M Semiconductor
File Size	735.57 KB
Description	650V N-Channel MOSFET
Datasheet	HM8N65I HM8N65K Datasheet (PDF)

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These devices are well suited for low vo ltage ap plications su ch as DC/DC converters a nd hig h efficiency switching for power management in portable and battery operated products.

Key Features

8.0A, 650V, RDS(on) = 1.26 @VGS = 10 V.
Low gate charge ( typical 15nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D TO-252 TO-251.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Vo.

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