HM8N60 - 600V N-Channel MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM8N60
Manufacturer	H&M Semiconductor
File Size	303.53 KB
Description	600V N-Channel MOSFET
Datasheet	HM8N60 Datasheet
Additional preview pages of the HM8N60 datasheet.

HM8N60 Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

7.5A, 600V, RDS(on) = 1.20Ω @VGS = 10 V.
Low gate charge ( typical 29nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Ga.

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Published: Jun 21, 2025 |