HM8N65F - 650V N-Channel MOSFET

This page provides the datasheet information for the HM8N65F, a member of the HM8N65 650V N-Channel MOSFET family.

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM8N65F
Manufacturer	H&M Semiconductor
File Size	501.06 KB
Description	650V N-Channel MOSFET
Datasheet	HM8N65F Datasheet
Additional preview pages of the HM8N65F datasheet.

HM8N65F Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

7.5A, 650V, RDS(on) = 1.20Ω (typical) @VGS = 10 V.
Low gate charge ( typical 29nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1).

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Published: Jun 30, 2025 |