HM8N65F Datasheet 650v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM8N65 / HM8N65F HM8N65 / HM8N65F 650V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	HM8N65F
Manufacturer	H&M Semiconductor
File Size	501.06 KB
Description	650V N-Channel MOSFET
Datasheet	HM8N65F HM8N65 Datasheet (PDF)

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.

Key Features

7.5A, 650V, RDS(on) = 1.20Ω (typical) @VGS = 10 V.
Low gate charge ( typical 29nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1).

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