Datasheet4U Logo Datasheet4U.com

HM8N65K Datasheet 650v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM8N65K/HM8N65I HM8N65K/HM8N65I 650V N-Channel MOSFET General.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These devices are well suited for low vo ltage ap plications su ch as DC/DC converters a nd hig h efficiency switching for power management in portable and battery operated products.

Key Features

  • 8.0A, 650V, RDS(on) = 1.26 @VGS = 10 V.
  • Low gate charge ( typical 15nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D TO-252 TO-251.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Vo.

HM8N65K Distributor & Price

Compare HM8N65K distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.