HY1906P - N-Channel Enhancement Mode MOSFET

HOOYI

General Description

100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S D Applications G

Power Management for Inverter Systems.

Key Features

65V/130A RDS(ON) = 7.5 mΩ (typ. ) @ VGS=10V Pin.

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HY1906P n-channel enhancement mode mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HY1906P
Manufacturer	HOOYI
File Size	2.20 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY1906P Datasheet

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HY1906P N-Channel Enhancement Mode MOSFET Features • • • • 65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S D Applications G • • Switching application Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P HY1906 G ÿ YYWWJ P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.