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HY1906P Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HY1906P N-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number HY1906P
Manufacturer HOOYI
File Size 2.20 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY1906P-HOOYI.pdf

General Description

100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS pliant) D S D Applications G • • Switching application Power Management for Inverter Systems.

S N-Channel MOSFET Ordering and Marking Information Package Code P HY1906 G ÿ YYWWJ P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish;

which are fully pliant with RoHS.

Key Features

  • 65V/130A RDS(ON) = 7.5 mΩ (typ. ) @ VGS=10V Pin.

HY1906P Distributor