Datasheet4U Logo Datasheet4U.com

HBC327 Datasheet PNP Epitaxial Planar Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HBC327
Manufacturer Hi-Sincerity Mocroelectronics
File Size 52.12 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet HBC327 HBC327_Hi Datasheet (PDF)

General Description

This HBC327 is designed for driver and output-stages of audio amplifiers.

Key Features

  • High DC Current Gain: 100-600 at IC=100mA,VCE=1V.
  • Complementary to HBC337 TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

More Datasheets from Hi-Sincerity Mocroelectronics

Part Number Description
HBC237 NPN EPITAXIAL PLANAR TRANSISTOR
HBC546 NPN EPITAXIAL PLANAR TRANSISTOR
HBC547 NPN EPITAXIAL PLANAR TRANSISTOR
HBC548 NPN EPITAXIAL PLANAR TRANSISTOR
HBC556 PNP EPITAXIAL PLANAR TRANSISTOR
HBC557 PNP EPITAXIAL PLANAR TRANSISTOR
HBC558 PNP EPITAXIAL PLANAR TRANSISTOR
HBC807 PNP EPITAXIAL PLANAR TRANSISTOR
HBC817 NPN EPITAXIAL PLANAR TRANSISTOR
HBC846 NPN EPITAXIAL PLANAR TRANSISTOR

HBC327 Distributor