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HBC327 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HBC327 datasheet PDF. This datasheet also covers the HBC327_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This HBC327 is designed for driver and output-stages of audio amplifiers.

Key Features

  • High DC Current Gain: 100-600 at IC=100mA,VCE=1V.
  • Complementary to HBC337 TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBC327_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC327
Manufacturer Hi-Sincerity Mocroelectronics
File Size 52.12 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC327 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HBC237 NPN EPITAXIAL PLANAR TRANSISTOR
HBC546 NPN EPITAXIAL PLANAR TRANSISTOR
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HBC548 NPN EPITAXIAL PLANAR TRANSISTOR
HBC556 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page No. : 1/5 Description This HBC327 is designed for driver and output-stages of audio amplifiers. Features • High DC Current Gain: 100-600 at IC=100mA,VCE=1V • Complementary to HBC337 TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ....................................