HiSemicon SFD6003PT
The SFD6003PT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | SFD6003PT |
|---|---|
| Datasheet | SFD6003PT Download |
| Manufacturer |  HiSemicon |
| Description | -30A -60V P-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
It can be used in a wide variety of applications. Such as:PWMAPPLICATIONS
,Power Management,etc.FEATURES
● RDS(on)=24mΩ(Typ)@VGS=-10V，ID=-15A● RDS(on)=26mΩ(Typ)@VGS=-4.5V，ID=-10A
● VDS=-60V,ID=-30A
● Low Crss:201pF@VDS=-25V
● Advance Trench Technology
● Fast Switching and High efficiency
● Lead Free and Green Devices Available:Rohs Compliant SFD6003PT TO-252 Rev 1.0 Page1 of 7 SFD6003PT
ABSOLUTE MAXIMUM RATINGS
(TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25C TC = 100C Drain Current Pulsed(Note 1) Power Dissipation(TC=25C) Single Pulsed Avalanche Energy (Note 2) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings -60 ±20 -30 -20 -120 52 92 -55~+175 -55~+175 Unit V V A A W mJ C C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA MAX 2.6 62.5 Unit C/W C/W ELE...
