SFD6003PT Datasheet | HiSemicon

DESCRIPTION The SFD6003PT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Such as:PWM Applications,Power Management,etc. FEATURES - RDS(on)=24mΩ(Typ)@VGS=-10V，ID=-15A - RDS(on)=26mΩ(Typ)@VGS=-4.5V，ID=-10A - VDS=-60V,ID=-30A - Low Crss:201p F@VDS=-25V - Advance Trench Technology - Fast Switching and High efficiency - Lead Free and Green Devices Available:Rohs pliant TO-252 Http://.hi-semicon. Rev 1.0 Page1 of 7 ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25C TC = 100C Drain Current Pulsed(Note 1) Power Dissipation(TC=25C) Single Pulsed Avalanche Energy (Note 2) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS IDM PD EAS TJ Tstg Ratings -60 ±20 -30 -20 -120 52 92 -55~+175 -55~+175 Unit V V A W m J C C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA MAX 2.6 62.5 Unit C/W C/W ELECTRICAL CHARACTERISTICS Characteristics Off Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Current On Characteristics Gate Threshold Voltage Static Drain- Source On State Resistance(Note 3) Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall...