Datasheet4U Logo Datasheet4U.com

SFD9N65 - 9A 650V N-CHANNEL MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Features

  • VDS(V)=650V, ID=9A.
  • RDS(ON) TYP:0.88Ω@VGS=10V ID=4.5A MAX:1.0Ω.

📥 Download Datasheet

Datasheet Details

Part number SFD9N65
Manufacturer HiSemicon
File Size 804.82 KB
Description 9A 650V N-CHANNEL MOSFET
Datasheet download datasheet SFD9N65 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SFD Surface Mount Flip-Flop Die/Rectifiers Sussex Semiconductor
SFD-045A Self Control Protector Dexerials
SFD-047A Self Control Protector Dexerials
SFD-048A Self Control Protector Dexerials
SFD-125A Self Control Protector Dexerials

Other Datasheets by HiSemicon

Part Number Description
SFD2003T 30A 20V N-CHANNEL MOSFET
SFD2006T 60A 20V N-CHANNEL MOSFET
SFD2008T 80A 20V N-CHANNEL MOSFET
SFD3010T 100A 30V N-CHANNEL MOSFET
SFD3012T 120A 30V N-CHANNEL MOSFET

Full PDF Text Transcription

Click to expand full text
9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features ◆VDS(V)=650V, ID=9A ◆RDS(ON) TYP:0.88Ω@VGS=10V ID=4.5A MAX:1.
Published: |