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2SK3348 Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A (Z) 2nd.Edition.

Key Features

  • Low on-resistance R DS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) R DS = 2.2 Ω typ. (VGS = 2.5 V , I D = 50 mA).
  • 2.5 V gate drive device.
  • Small package (CMPAK) Outline CMPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3348 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I.

2SK3348 Distributor

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